Cleaning device with deeply reaching plasma and assisting electrodes

ABSTRACT

A cleaning device with deeply reaching plasma and assisting electrodes has supporting racks, a chamber, a plasma sources, metallic grids. Flat boards to be cleaned such as circuit boards are located in the supporting racks. The supporting racks are disposed in the chamber. The metallic grids are disposed on two sides of the chamber. The plasma source is disposed next to the metallic grids. Electric voltage is applied to the metallic grids such that plasma from the plasma source can be pushed deeply into the supporting racks to evenly and sufficiently clean the circuit boards.

BACKGROUND OF THE INVENTION

[0001] The present invention relates to a cleaning device with deeplyreaching plasma and assisting electrodes, and particularly to one whichis used in cleaning flat-board shaped things such as silicon wafers, Culead frames, etc.

[0002] In the process of making integrated circuits, the integratedcircuits can have dirt unwarily attached to them because of themanufacturing conditions and dust in the environment. Therefore, it isnecessary that the dirt and dust are removed from the integratedcircuits. Otherwise, other necessary materials cannot be appropriatelyattached to the integrated circuits.

[0003] Cleaning devices for integrated circuits can also be used insurface processing, and plating such as plasma ashing of silicon,removing of passivation layer.

[0004] However, the inventor of the present invention found thatconventional cleaning devices with plasma could not clean the circuitsvery sufficiently because the plasma could not reach deeply enough.

SUMMARY OF THE INVENTION

[0005] Therefore, it is a main object of the present invention toprovide a cleaning device with deeply reaching plasma and assistingelectrodes such that the circuits can be sufficiently cleaned.

[0006] The cleaning device deeply reaching plasma and assistingelectrodes has:

[0007] several supporting racks; the supporting racks receiving flatboards to be cleaned therein; the supporting racks having openings forpermitting the flat boards to be inserted;

[0008] a chamber; the chamber receiving the supporting racks therein;

[0009] several plasma sources; the plasma sources being disposed besidetwo sides of the supporting racks; the plasma sources being capable ofsending out plasma to clean the flat boards;

[0010] several metallic grids; the metallic grids being disposedadjacent to the supporting rocks and the plasma sources; electricvoltage being applied to the metallic grids to help the plasma of theplasma sources pushed deeply into the supporting racks for permittingthe plasma to clean the flat boards evenly and sufficiently.

BRIEF DESCRIPTION OF THE DRAWINGS

[0011] This invention will be better understood by referring to theaccompanying drawings, wherein:

[0012]FIG. 1 is a block diagram of the structure of the cleaning deviceof the present invention.

[0013]FIG. 2 is a view of the cleaning device of the present inventionwith inductively coupling plasma.

[0014]FIG. 3 is a view of the cleaning device with inductively couplingplasma according to a second embodiment of the present invention.

[0015]FIG. 4 is an exploded perspective view of the supporting rack ofthe present invention.

[0016]FIG. 5 is another supporting rack according to the presentinvention.

[0017]FIG. 6 is a block diagram of the structure of the cleaning devicewithout holding members according to the present invention.

[0018]FIG. 7 is a view of the cleaning device of inductively couplingplasma without holding members.

[0019]FIG. 8 is a view of the cleaning device with insulating cushionsof a first type.

[0020]FIG. 9 is a view of the cleaning device with insulating cushionsof a second type.

[0021]FIG. 10 is a view of the cleaning device with insulating cushionsof a third type.

[0022]FIG. 11 is a view of the cleaning device with flat-spiral-shapedantennas.

[0023]FIG. 12 is a perspective view of the cleaning device with hollowcathode discharge of a first type.

[0024]FIG. 13 is side view of the cleaning device in FIG. 12.

[0025]FIG. 14 is a side view of the cleaning device with hollow cathodedischarge of a second type.

[0026]FIG. 15 is a block diagram of the cleaning device with magneticfield and holding member.

[0027]FIG. 16 is a view of the cleaning device with magnetic field andholding member type one.

[0028]FIG. 17 is a view of the cleaning device with magnetic field andholding members type two.

[0029]FIG. 18 is a view of cleaning device with magnetic field andholding members type three.

[0030]FIG. 19 is a block diagram of the cleaning device with magneticfield, without holding members according to the present invention.

[0031]FIG. 20 is a view of the cleaning device with magnetic field,without holding members, type one.

[0032]FIG. 21 is a view of the cleaning device with magnetic field,without holding members, type two.

[0033]FIG. 22 is an exploded perspective view of the supporting racks ofthe cleaning device according to a third embodiment of the presentinvention.

[0034]FIG. 23 is a perspective view of the supporting rack in FIG. 22.

[0035]FIG. 24 is a cross-sectional view of the supporting rack in FIG.22.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0036] Referring to FIGS. 1, 2 and 3, the cleaning device with deeplyreaching plasma and assisting electrodes of the present inventionincludes:

[0037] several supporting racks 1; referring to FIGS. 4 and 5, the racks1 each has openings 12 on a front side and a rear side and supportprotrusions 11. Thus, flat boards, and held in position by the supportprotrusions 11. The racks 1 are further provided with covers 13 havingthrough holes 131. The covers 13 are fitted to the front and the rearsides of the racks 1. The racks 1 can also be used without the covers 13fitted to them. The racks 1 are each provided with elongated holes 14 ontwo lateral sides. The racks 1 can also be provided without elongatedholes 14 on two lateral sides. The openings 12, the through holes 131and the elongated holes 14 can help plasma sent into the racks easily;

[0038] a holding member 2; the holding member 2 can be made of insulatedmaterials and conductive materials as well; the holding member 2 canhold the supporting racks 1; the cleaning device also can be usedwithout the holding member 2 provided in it, when the holding member 2is not used, the supporting racks 1 are piled up as shown in FIGS. 6, 7and 8; there can be more than one holding members 2;

[0039] a chamber 3; the chamber 3 has a room in it; the supporting racks1 and the holding members 2 are received in the chamber; the chamber 3can become vacuum by using a vacuum machine;

[0040] a plasma source 4; the plasma source 4 is disposed on two sidesof the supporting racks 1 and the holding member 2; the plasma source 4can be ICP ( inductively-oupling plasma), HCD (hollow cathodedischarge), Helicon or CCP ( capacivity-coupling plasma); there can bemore than one plasma sources 4;

[0041] a metallic grid 5; the metallic grid 5 is disposed between thesupporting racks 1 and the plasma sources 4; when electric voltage isapplied to the metallic grid 5, electrons or ions of the plasma are sentinto the supporting racks 1; thus, the plasma can reach deeply and havedesirable cleaning capability; the meshes of the metallic grid 5 can berectangular, round, oval or honeycomb-shaped, and is about one to twentymini meters wide; the metallic grid can be formed by various designssuch as it is formed apart by plurality horizontal parallel wires,vertical parallel wires, horizontal oblique wires and vertical obliquewires. The metallic grid 5 can be replaced with metallic plates havingthrough holes on them, the electric voltage applied to the metallic grid5 can be DCV, unipolar positive or unipolar negative pulse, bipolarpulse or intermediate frequency (40 k-13.56 MHZ)

[0042] In using the cleaning device with deeply reaching plasma whereinthe holding member 2 is used; referring to FIGS. 1, 2 and 3, the thingsto be cleaned are inserted into the supporting racks 1 and thesupporting racks 1 are disposed in the holding member 2; then, theholding member 2 is disposed in the chamber 3, and the metallic grids 5and the plasma sources 4 are disposed on two sides of the holding member2; in using the cleaning device having no holding member 2. Referring toFIGS. 6, 7 and 8, the things to be cleaned are inserted into thesupporting racks 1, and the racks 1 are disposed in the chamber 3; thenthe plasma sources 4 and the metallic grids 5 are disposed on two sidesof the supporting racks 1; then, the plasma sources 4 send out plasma,and the bias voltage is applied to the metallic grid 5. Because theholding members 2 are disposed adjacent to the plasma sources 4, thethings to be cleaned can be sufficiently contacted by the plasma. And,the plasma can flow evenly between the flat-board shaped things to becleaned. Because of the electric voltage, the metallic grid 5 has eitherpositive electric field of negative electric field; the positiveelectric field can push the ions of the plasma into the supporting racks1, while the negative electric field pushes the electrons of the plasmainto the racks 1. That is, the metallic grid 5, having electric voltage,can increase the density of the plasma, and push the ions or theelectrons of the plasma into the racks 1 deeply. Thus, the cleaningeffectiveness and the evenness of the plasma are obviously increased.

[0043] In using the cleaning device with the holding members 2, itdoesn't matter whether the holding members 2 and the supporting racks 1are made of conductive materials or not. When the supporting racks 1 orthe holding members 2 are conductive, we can apply positive or negativebias voltage pulse of low frequency (about 0.1-500 KHZ) to attractelectrons or ions for spreading the plasma. And, the action strength ofthe ions can be controlled to achieve optimum cleaning effect.Furthermore, when applying electric voltage to the supporting racks 1 orthe holding members 2, the racks 1 and the holding members 2 should bein floating potential type for preventing the bias voltage from beingapplied on the chamber 3. For example, when the voltage is applied toconductive supporting racks 1, the holding members 2 should beinsulated; and, referring to FIG. 9 when both the racks land the holdingmembers 2 are conductive and the voltage is applied to the racks 1,insulating cushions 21 are inserted between the racks 1 and the holdingmember 2; referring to FIG. 14 when both the racks 1 and the holdingmembers 2 are conductive, and the voltage is applied to the holdingmembers 2, insulating cushions 21 can be inserted between the chamber 3and the holding members 2.

[0044] Referring to FIG. 10, when the holding members 2 are not used,the supporting racks 1 are conductive, the racks 1 are piled up orarrayed with a insulating cushion 21 inserted between the lowest one ofthe racks 1 and the chamber 3 in order to form a floating potential; thevoltage applied to the supporting racks 1 can be positive or negativedirect current voltage, pulse voltage (about 0.1-500 KHZ), orintermediate frequency alternating current voltage.

[0045] Referring to FIGS. 2, 3 and 7, when the plasma source 4 usesinductively-coupling plasma (ICP), the supporting racks 1 or the holdingmembers 2 have antennas 41 disposed on two opposing sides; the antennas41 can be spiral-shaped, wound up with level-spiral-shaped orflat-spiral-shaped. No matter what kind of shape the antennas 41 have,high frequency power (about 10 k-54.24 MHZ) can be sent through theantennas 41. The antennas 41 can be grounded but they do necessarilyhave to be grounded. When the antennas 41 are grounded, the potentialdifference can be reduced, and so the action strength of the ions of theplasma is reduced. When the antennas 41 are not grounded, the potentialdifference is increased, and so the action strength of the ions isincreased. Thus, the action strength of the plasma ions is controlled toachieve optimum cleaning effect.

[0046] Referring to FIG. 11, if the antennas 41 of theinductively-coupling plasma source are flat-spiral-shaped, and are notgrounded, the metallic grid 5 is not a must; the flat-spiral-shapedantennas 41 have negative potential, and therefore have the function ofa metallic grid.

[0047] Referring to FIGS. 12 and 13, when the plasma source 4 useshollow cathode discharge, hollow negative electrodes 42 are disposed ontwo sides of the holding members 2; the hollow negative electrodes 42have through holes 421. When negative voltage is applied to the hollownegative electrodes 42, and air is passed through the through holes 421from outside, negative plasma will be produced on inner sides of thehollow negative electrodes 42; the plasma will flow into the supportingracks 1 to clean the plate-shaped things in the racks 1. Referring toFIGS. 13 and 14, when the plasma sources 4 use hollow cathode discharge(HCD), the metallic grid 5 is not a must. When the metallic grid 5 isnot used, the hollow negative electrodes 42 having through holes havehigh voltage, and so have the function of the metallic grid 5. However,if the metallic grid 5 is used in the hollow cathode discharge, thecleaning device can be adjusted in a greater range in respect of itscleaning effect.

[0048] Referring to FIGS. 15 to 21, a magnetic field is provided onoutside of the plasma source 4; namely, magnets 6 are disposed onoutside of the plasma sources 4. The magnets 6 can be electromagnets orpermanent magnets so as to provide axial direction or diametricdirection of the magnetic field in respect of the plasma sources 4.

[0049] Moreover, buffer members 15 are provided; the buffer members 15each has a rack part 151, several buffer plates 152, an inner frame 153and an outer frame 154. The rack parts 151 each has elongated trenches1514 on outer sides, and support protrusions 1511 corresponding to thesupport protrusions 11 of the supporting racks 1. The buffer plates 152are each located on corresponding ones of the support protrusions 1511.The outer frame 154 has connecting protrusions 1541, which engage theelongated trenches 1514 of the rack part 151 when the frame 154 isconnected to the rack part 151 with screws. The inner frame 153 also hasconnecting protrusions 1531, which engage elongated trenches (notnumbered) of the support rack 1 when the frame 153 is connected to thesupport racks 1 with screws. Thus, the buffer plates 152 are protectedfrom falling off the rack part 151 by the frames 153, 154. The buffermembers 15 are connected to the support racks 1 when the support racks 1don't have the covers 13 fitted to them. The buffer members 15 can helpthe plasma spread on the flat-board-shaped things to be cleaned in thesupport racks 1 evenly, preventing the outer portions of the things tobe cleaned from being cleaned too much, and the intermediate portionsfrom being insufficiently cleaned.

[0050] The buffer plates 15 can be made of metals, waste circuit boardsor insulating plates such as Teflon.

[0051] The things to be cleaned are located on the supportingprotrusions 11 of the support racks 1, and the buffer members 15 arefitted to the support racks as above said, and as shown in FIG. 23.Referring to FIG. 24, the buffer plates 152 are each located at a sameheight as the corresponding things to be cleaned. Then, the supportracks 1 are disposed in the cleaning device for the cleaning process.

[0052] From the above description, the cleaning device of the presentinvention can be known to have desirable features as follows.

[0053] 1. It has relatively uncomplicated structure.

[0054] 2. It has deeply reaching and evenly spreading plasma tosufficiently clean the boards to be cleaned.

What is claimed is:
 1. A cleaning device with deeply reaching plasma andassisting electrodes, comprising plurality of supporting racks, saidsupporting racks each having openings on a front side and a rear sidefor permitting flat boards to be inserted there into; a chamber, saidchamber having room therein for receiving said supporting racks; saidchamber being capable of getting vacuum; plurality of plasma sources;said plasma sources being disposed beside two sides of said supportingracks; said plasma sources being capable of sending out plasma forcleaning said flat boards; plurality of metallic grids, said metallicgrids being disposed adjacent to said supporting racks between saidsupporting racks and said plasma sources; electric voltage being appliedto said metallic grids for helping said plasma of said plasma sourcespushed into said supporting racks.
 2. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 1, whereinsaid metallic grids have rectangular meshes, honeycomb-shaped meshes,round meshes and oval meshes. 3.The cleaning device with deeply reachingplasma and assisting electrodes as claimed in claim 1, wherein saidmetallic grids have meshes, said meshes being each one to twenty minimeter wide.
 4. The cleaning device with deeply reaching plasma andassisting electrodes as claimed in claim 1, wherein metallic grids canbe formed apart by plurality horizontal and parallel wires, formed apartby plurality vertical and parallel wires, formed apart by pluralityhorizontal and oblique wires and formed apart by plurality vertical andoblique wires.
 5. The cleaning device with deeply reaching plasma andassisting electrodes as claimed in claim 1, wherein said metallic gridsare replaced with metallic plates having through holes.
 6. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 1, wherein said electric voltage is positive or negative directcurrent voltage, unipolar positive or negative pulse, bipolar pulse andan intermediate frequency one.
 7. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 15, whereinsaid intermediate frequency ranges from 40 KHZ to 13.56 MHZ.
 8. Thecleaning device with deeply reaching plasma and assisting electrodes asclaimed in claim 1, further having covers having through holes, saidcovers being coupled to said supported racks from said openings.
 9. Thecleaning device with deeply reaching plasma and assisting electrodes asclaimed in claim 1, wherein said openings of said supporting racks facesaid metallic grids.
 10. The cleaning device with deeply reaching plasmaand assisting electrodes as claimed in claim 1 or 6, wherein saidsupporting racks each has elongated holes on two sides.
 11. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 1, wherein said supporting racks are made of insulatingmaterials or conductive materials.
 12. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 1, whereinsaid supporting racks are made of conductive materials and are appliedsaid electric voltage, and insulating cushions are inserted between saidsupporting racks and chamber.
 13. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 12, whereinpositive or negative direct current voltage is applied to saidsupporting racks.
 14. The cleaning device with deeply teaching plasmaand assisting electrodes as claimed in claim 12, wherein a pulse voltageis applied to said supporting racks, said pulse voltage having frequencyranging form 0.1-500 KHZ.
 15. The cleaning device with deeply reachingplasma and assisting electrodes as claimed in claim 12, wherein anintermediate frequency alternating current voltage of 0.1-500 KHZ isapplied to said supporting racks.
 16. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 1, whereinfurther having plurality of holding members, said holding members beingcapable of receiving said supporting racks.
 17. The cleaning device withdeeply reaching plasma and assisting electrodes as claimed in claim 16,wherein said holding member are made of insulating materials orconductive materials.
 18. The cleaning device with deeply reachingplasma and assisting electrodes as claimed in claim 16, wherein saidsupporting racks are made of conductive materials, and said holdingmembers are made of insulating materials; bias voltage being applied tosaid supporting racks.
 19. The cleaning device with deeply reachingplasma and assisting electrodes as claimed in claim 16, wherein saidsupporting racks and said holding members are made of conductivematerials, insulating cushions being inserted between said supportingracks and said holding member; bias voltage being applied to saidsupporting racks.
 20. The cleaning device with deeply reaching plasmaand assisting electrodes as claimed in claim 16, wherein said supportingracks and said holding members are made of conductive materials;insulating cushions being inserted between said supporting racks andsaid holding member; bias voltage being applied to said holding members.21. The cleaning device with deeply reaching plasma and assistingelectrodes as claimed in claim 1, wherein said plasma sources areinductively-coupling plasma.
 22. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 21, whereinantennas are disposed on two opposing sides of said supporting racks,high frequency power being sent to said antennas.
 23. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 22, wherein said antennas are spiral-shaped orflat-spiral-shaped.
 24. The cleaning device with deeply reaching plasmaand assisting electrodes as claimed in claim 22, wherein said antennasare flat-spiral-shaped, and are not grounded; said metallic grids beingremoved from said cleaning device.
 25. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 22, whereinsaid antennas are wound up with level-spiral-shaped.
 26. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 22, wherein said antennas are grounded.
 27. The cleaning devicewith deeply reaching plasma and assisting electrodes as claimed in claim1, wherein said plasma sources are hollow cathode discharge (HCD) 28.The cleaning device with deeply reaching plasma and assisting electrodesas claimed in claim 1, wherein said plasma sources are hollow cathodedischarge (HCD), and said metallic grids are removed from said cleaningdevice.
 29. The cleaning device with deeply reaching plasma andassisting electrodes as claimed in claim 27 or 28, wherein said hollowcathode discharge has hollow negative electrodes disposed adjacent tosaid supporting racks, said hollow negative electrodes having throughholes for air to be passed therethrough; when said negative voltage isapplied to said hollow negative electrodes, and air is passed throughsaid through holes from outside, said negative plasma will be producedon inner sides of said hollow negative electrodes, and said plasma willflow into said supporting racks to clean said plat-shaped things in saidracks.
 30. The cleaning device with deeply reaching plasma and assistingelectrodes as claimed in claim 1, wherein said plasma sources arehelicon or capacivity coupling plasma (CCP).
 31. The cleaning devicewith deeply reaching plasma and assisting electrodes as claimed in claim1, wherein a magnetic field which axial direction or diametric directionin respect of said plasma sources is provided on outside of said plasmasources.
 32. The cleaning device with deeply reaching plasma andassisting electrodes as claimed in claim 31, wherein said magnetic fieldhas two opposing magnets on outside of said plasma source.
 33. Thecleaning device with deeply reaching plasma and assisting electrodes asclaimed in claim 32, wherein said magnets are electromagnets orpermanent magnets.
 34. A cleaning device with deeply reaching plasma andassisting electrodes, comprising plurality of supporting racks, saidsupporting racks having support protrusions therein for locating flatboards to be cleaned, a plasma source, said plasma source being disposedon two sides of said supporting racks; said plasma source being capableof sending plasma into said supporting racks to clean said flat boards;buffer members; said buffer members being disposed between saidsupporting racks and said plasma source, and connected to saidsupporting racks; said buffer members each having a rack part, andplurality of buffer plates; said rack part having support protrusionscorresponding to said support protrusions of said support racks; saidbuffer plates being each located by a corresponding one of said buffermember support protrusions in said rack part.
 35. The cleaning devicewith deeply reaching plasma and assisting electrodes as claimed in claim34, wherein said buffer members each further has an inner frame and anouter frame; said inner frames being disposed between said supportingracks and said buffer member rack part; said outer frame being fitted toan outer end of said rack part; said frames preventing said bufferplates from falling off said rack parts.
 36. The cleaning device withdeeply reaching plasma and assisting electrodes as claimed in claim 34or 35, wherein said buffer plates are made of one of materials includingmetallic plates, waste circuit boards and Teflon.
 37. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 35, wherein said rack parts, said outer and said inner frameshave screws holes for screws to be screwed there into to connect same.38. The cleaning device with deeply reaching plasma and assistingelectrodes, comprising things to be cleaned are inserted into supportingracks, and one or more of said supporting racks are disposed in chamber;plasma sources are disposed on two sides of said supporting racks; then,said chamber is made to be vacuum, and then provided with gas foradjusting pressure in said chamber; further making plasma sources toplasma; wherein characterized in said that two sides of said supportingracks are disposed adjacent to one or more metallic grids, namelybetween said supporting racks and plasma sources; additionally, electricvoltage being applied to said metallic grids; by this, the metallicgrids having electric voltage, can increase the density of the plasma,and push the ions or the electrons of the plasma into the racks deeply.Thus, the cleaning effectiveness and the evenness of the plasma areobviously increased.
 39. The cleaning device with deeply reaching plasmaand assisting electrodes as claimed in claim 38, wherein said metallicgrids have meshes each one to twenty mini meters wide.
 40. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 38, wherein said metallic grids are replaced with metallicplates having through holes.
 41. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 38, whereinsaid electric voltage is positive or negative direct current voltage andunipolar of positive or negative pulse.
 42. The cleaning device withdeeply reaching plasma and assisting electrodes as claimed in claim 38,wherein said electric voltage is bipolar pulse.
 43. The cleaning devicewith deeply reaching plasma and assisting electrodes as claimed in claim38, wherein said electric voltage is an intermediate frequency.
 44. Thecleaning device with deeply reaching plasma and assisting electrodes asclaimed in claim 38, wherein said intermediate to high frequency rangesfrom 40 KHZ to 13.56 MHZ.
 45. The cleaning device with deeply reachingplasma and assisting electrodes as claimed in claim 38, wherein saidsupporting racks are piled up or arrayed.
 46. The cleaning device withdeeply reaching plasma and assisting electrodes as claimed in claim 38,wherein said supporting racks are made of conductive materials and areapplied said electric voltage, and insulating cushions are insertedbetween said supporting racks and said chamber.
 47. The cleaning devicewith deeply reaching plasma and assisting electrodes as claimed in claim46, wherein said electric voltage is positive or negative direct currentvoltage.
 48. The cleaning device with deeply reaching plasma andassisting electrodes as claimed in claim 46, wherein said electricvoltage is pulse voltage of 0.1 to 500 KHZ.
 49. The cleaning device withdeeply reaching plasma and assisting electrodes as claimed in claim 46,wherein an intermediate frequency alternating current voltage of 0.1-500KHZ is applied to said supporting racks.
 50. The cleaning device withdeeply reaching plasma and assisting electrodes as claimed in claim 38,wherein further having plurality of holding members for receiving saidsupporting racks therein.
 51. The cleaning device with deeply reachingplasma and assisting electrodes as claimed in claim 50, wherein saidsupport racks are made of conductive materials, and said holding membersare made of insulating materials; bias voltage being applied to saidsupporting racks.
 52. The cleaning device with deeply reaching plasmaand assisting electrodes as claimed in claim 50, wherein said supportingracks and said holding member are made of conductive materials, andinsulating cushions are inserted between said supporting racks and saidholding members; bias voltage being applied to said supporting racks.53. The cleaning device with deeply reaching plasma and assistingelectrodes as claimed in claim 50, wherein said supporting racks andsaid holding member are made of conductive materials, and insulatingcushions are inserted between said supporting racks and said holdingmembers; bias voltage being applied to said holding members.
 54. Thecleaning device with deeply reaching plasma and assisting electrodes asclaimed in claim 38, wherein said plasma sources areinductively-coupling plasma.
 55. The cleaning device with deeplyreaching plasma and assisting electrodes as claimed in claim 54, whereinantennas are disposed on two opposing sides of said supporting racks,high frequency power being sent to said antennas.
 56. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 38, wherein said plasma sources are hollow cathode discharge.57. The cleaning device with deeply reaching plasma and assistingelectrodes as claimed in claim 38, wherein said plasma sources arehollow cathode discharge, and said metallic grids are removed from saidcleaning device.
 58. The cleaning device with deeply reaching plasma andassisting electrodes as claimed in claim 56 or 57, wherein said hollowcathode discharge has hollow negative electrode disposed on two sides ofsaid holding members; said hollow negative electrodes having throughholes; when said negative voltage is applied to said hollow negativeelectrodes, and air is passed through said through holes from outside,said negative plasma will be produced on inner sides of said hollownegative electrodes, and said plasma will flow into said supportingracks to clean said plat-shaped things in said racks.
 59. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 38, wherein said plasma sources are helicon or capacivitycoupling plasma.
 60. The cleaning device with deeply reaching plasma andassisting electrodes as claimed in claim 38, wherein a magnetic fieldwhich axial direction or diametric direction in respect of said plasmasources is provided on outside of said plasma sources.
 61. The cleaningdevice with deeply reaching plasma and assisting electrodes as claimedin claim 60, wherein said magnetic field has two opposing magnets.